So far, in addition to halogen atoms, other non-metallic atoms can become part of the aromatic heterocycle, and the target ring system is still aromatic.Lim, Sunkwon; Lee, Joong Cheol; Sohn, Do Sung; Lee, Wan In; Lee, Ik-Mo researched the compound: 2,6-Dimethyl-3,5-heptanedione( cas:18362-64-6 ).Application In Synthesis of 2,6-Dimethyl-3,5-heptanedione.They published the article 《A Study on the Development of Chemical Vapor Deposition Precursors. 4. Syntheses and Characterization of New N-Alkoxo-β-ketoiminate Complexes of Niobium and Tantalum》 about this compound( cas:18362-64-6 ) in Chemistry of Materials. Keywords: ethoxide niobium tantalum alkoxoketoiminate complex preparation CVD precursor; thermal decomposition stability niobium tantalum ethoxide alkoxoketoiminate; tantalum oxide film preparation ethoxide alkoxoketoiminate complex precursor; niobium oxide film preparation ethoxide alkoxoketoiminate complex precursor; ketoiminate alkoxo niobium tantalum ethoxide complex preparation CVD precursor. We’ll tell you more about this compound (cas:18362-64-6).
Partial replacement of ethoxide ligands with N-alkoxo-β-ketoiminates in the tantalum or niobium ethoxides resulted in M(N-alkoxo-β-ketoiminate)(OEt)3 (M = Ta and Nb) complexes. Most of these complexes are liquid and showed enhanced thermal and chem. stability, especially toward moisture. These complexes have octahedral geometry with a meridional N-alkoxo-β-ketoiminate ligand and showed fluxional behaviors. All of these precursors, especially the ones with Me groups on both the N-alkoxo and β-ketoiminate backbones, demonstrate considerably higher deposition rates than M2(OEt)10 (M = Ta and Nb), one of the most popular precursors for Ta2O5 and Nb2O5 films. TGA experiments showed that successive decomposition of ethoxide ligands is followed by decomposition of N-alkoxo-β-ketoiminate in the pyrolysis process. Introduction of a Me group onto the N-hydroxyethyl backbone enhanced the thermal stability at lower temperatures and the pyrolysis rate at higher temperatures X-ray diffraction patterns indicate that the deposited films are not crystallized until the substrate temperature goes over 650°. Well-crystallized longish grains were formed in the Ta2O5 film deposited at 700°, but it was found from the depth profile spectra by Auger electron spectroscopy (AES) that the nitrogen and carbon impurities are 2.3% and 4.2%, resp., for the Ta2O5 film deposited at 550°. Heat treatment at 700° in oxygen removed the nitrogen impurity in this Ta2O5 completely, and the residual carbon is negligible from the AES and XPS results.
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Reference:
Thiazole | C3H3NS – PubChem,
Thiazole | chemical compound | Britannica